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MOSFETs are subject to different types of Single-Event Effects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive effects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive effects. In this paper an experimental setup used to study SEEs in power MOSFETs at the São Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.

Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs