English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A strong dependence of the electrical resistance of Te+ implanted (100) silicon was established on annealing by high-frequency (0.45 MHz) electromagnetic field for 30 and 60 minutes. The implantation was performed at 50 keV and fluence of 1?1017 cm?2. Cross-sectional high-resolution transmission electron microscopy of the 30 minutes treated samples shows a planar network of amorphous nanoclusters embedded in the amorphous silicon layer created by the implantation. As a result of a 60 minutes high-frequency electromagnetic field treatment, the nanoclusters formation dynamics changes and larger individual nanoclusters separated by highly resistive areas of amorphous silicon are formed. Crystallization of some of the nanoclusters is also observed. The structural changes are correlated with the corresponding electrical resistance measured by alternative current impedance spectroscopy at frequencies of 1 Hz up to 100 KHz. After 30 minutes treatment, the sample electrical resistance dropped by about four orders of magnitude as compared to the as-implanted sample. The situation after 60 minutes treatment is totally different: the sample resistance increased by about seven orders of magnitude in the low-frequencies range, as compared to the as-implanted sample. In the high-frequencies range the increase is about three orders of magnitude.

Te+ implanted silicon structure and electrical resistance dependence on high frequency electromagnetic field annealing

Te⁺ implanted silicon structure and electrical resistance dependence on high frequency electromagnetic field annealing