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The Mn-doped GaAs thin films were grown on p-type GaAs substrates by using Molecular Beam Epitaxy technique. The Schottky contacts on top of the (Ga,Mn)As layer were made of Pt metal. In contrast to the non-magnetic GaAs Schottky diodes, a large negative magnetoresistance (MR) in the dc current was observed in the magnetic diodes at low temperatures. The contributions to the observed MR effects from the spin dependent tunnelling through the thin Schottky barrier and the negative MR of the semiconducting layer are discussed in detail.

Magnetotransport in ferromagnetic schottky diodes made of Mn-doped GaAs