English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In our study, we systematically investigated the behavior of charge trapping in P-MOSFETs with HfO2/SiON gate stack. We found that typical linear extrapolation does not work well for the lifetime extraction at normal operation condition since the polarity of dominant trapped charge in high-k dielectric is not the same at lower and higher stress voltage regimes. This phenomenon is considered the competition of hole trapping and electron trapping with respect to applied gate voltages. Besides, the results of AC stress reveal the distinct responses to electrons and holes. It indicates that electrons can easily follow the AC signal while holes seem to need more time for the response at AC stress.

Impact of charge trapping effect on negative bias temperature instability in P-MOSFETs with HfO2/SiON gate stack

Impact of charge trapping effect on negative bias temperature instability in P-MOSFETs with HfO₂/SiON gate stack