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Graphene-based devices show $1/f$ low-frequency noise in several electronictransport properties, such as mobility and charge carrier concentration. Therecent outburst of experimental studies on graphene-based devices integratedinto circuit quantum electrodynamics systems has rekindled the interest inlow-frequency charge noise. We investigate charge carrier density noise ingraphene within the McWorther model where noise is induced by electron traps inthe substrate. We focus on the large doping regime and introduce a simplemodelization of the effect of localized/delocalized traps in terms ofsingle/double spin occupancy of trap states. We find that in both cases thecharge carrier spectrum of graphene obeys the $1/f^\alpha$ power-law behaviorwhere $\alpha$ is very close to the unity, and for each case we evaluate thedeviation $\beta=1-\alpha$. The amplitude of the noise is found to depend onthe trap energy distribution and on temperature. Single/double spin occupancyof trap states influences the temperature dependence of noise amplitude only tosecond order.

Charge carrier density noise in graphene: effect of localized/delocalized traps