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The total ionizing radiation (TID) response of commercial NPN silicongermanium hetero-junction bipolar transistors (SiGe HBTs) produced domesticwere investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s withCo-60 gamma irradiation source, respectively. The changes of the transistorparameter such as Gummel characteristics, excess base current before and afterirradiation are investigated. The results of the experiments shows that for theKT1151, the radiation damage have slightly difference under the different doserate after the prolonged annealing, shows an time dependent effect(TDE). Butfor the KT9041, the degradations of low dose rate irradiation are more higherthan the high dose rate, demonstrate that there have potential enhanced lowdose rate sensitive(ELDRS) effect exist on KT9041. The underlying physicalmechanisms of the different dose rates response induced by the gamma ray arediscussed.

Total ionizing dose effects of domestic SiGe HBTs under different dose rate