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A silicon pixel detector with fine pitch size of 19x19 um, developed base onSOI (silicon on insulator) technology, was tested under the illumination ofinfrared laser pulses. As an alternative way to particle beam tests, the laserpulses were tuned to very short duration and small transverse profile tosimulate the tracks of MIPs (minimum ionization particles) in silicon. Hitcluster sizes were measured with focused laser pulses propagating through theSOI detector perpendicular to its surface and most of the induced charge wasfound to be collected inside the seed pixel. For the first time, the signalamplitude as a function of the applied bias voltage was measured for this SOIdetector, deepening understanding of its depletion characteristics.

Test of a fine pitch SOI pixel detector with laser beam