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The total dose radiation and annealing responses of the back transistor ofSilicon-On-Insulator (SOI) pMOSFETs have been studied by comparing with thoseof the back transistor of SOI nMOSFETs fabricated on the same wafer. Thetransistors were irradiated by 60Co {\gamma}-rays with various doses, and thefront transistors are biased in a Float-State and Off-State, respectively,during irradiation. The total dose radiation responses of the back transistorsare characterized by their threshold voltage shifts. The results show that thetotal dose radiation response of the back transistor of SOI pMOSFETs, similarto that of SOI nMOSFETs, depends greatly on their bias conditions duringirradiation. However, with the Float-State bias, rather than the Off-Statebias, the back transistors of SOI pMOSFETs reveal a much higher sensitivity tototal dose radiation, which is contrary to those of SOI nMOSFETs. In addition,it is also found that the total dose radiation effect of the back transistor ofSOI pMOSFETs irradiated with Off-State bias, as well as that of the SOInMOSFETs, exhibits an increasing trend as the channel length decreases. Theannealing response of the back transistors after irradiation at roomtemperature without bias, characterized by their threshold voltage shifts,indicates that there is a relatively complex annealing mechanism associatedwith channel length and type, bias condition during irradiation. In particular,for all the transistors irradiated with Off-State bias, their back transistorsshow an abnormal annealing effect during early annealing. All the results havebeen discussed and analyzed in detail by the aid of simulation.

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs