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An all transistor active inductor shunt peaking structure has been used in aprototype of 8-Gbps high-speed VCSEL driver which is designed for the opticallink in ATLAS liquid Argon calorimeter upgrade. The VCSEL driver is fabricatedin a commercial 0.25-um Silicon-on-Sapphire (SoS) CMOS process for radiationtolerant purpose. The all transistor active inductor shunt peaking is used toovercome the bandwidth limitation from the CMOS process. The peaking structurehas the same peaking effect as the passive one, but takes a small area, doesnot need linear resistors and can overcome the process variation by adjust thepeaking strength via an external control. The design has been tapped out, andthe prototype has been proofed by the preliminary electrical test results andbit error ratio test results. The driver achieves 8-Gbps data rate as simulatedwith the peaking. We present the all transistor active inductor shunt peakingstructure, simulation and test results in this paper.

Active inductor shunt peaking in high-speed VCSEL driver design