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A gated Hall-bar device is made from an epitaxially grown, free-standing InSbnanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structureand the electron transport properties in the InSb nanosheet are studied bygate-transfer characteristic and magnetotransport measurements at lowtemperatures. The measurements show that the carriers in the InSb nanosheet areof electrons and the carrier density in the nanosheet can be highly efficientlytuned by the graphite gate. The mobility of the electrons in the InSb nanosheetis extracted from low-field magneotransport measurements and a value of themobility exceeding ~18000 cm$^2$V$^{-1}$s$^{-1}$ is found. High-fieldmagentotransport measurements show well-defined Shubnikov-de Haas (SdH)oscillations in the longitudinal resistance of the InSb nanosheet.Temperature-dependent measurements of the SdH oscillations are carried out andkey transport parameters, including the electron effective massm$^*$$\sim$0.028 m$_0$ and the quantum lifetime $\tau$$\sim$0.046 ps, in theInSb nanosheet are extracted. It is for the first time that such experimentalmeasurements have been reported for a free-standing InSb nanosheet and theresults obtained indicate that InSb nanosheet/hBN/graphite gate structures canbe used to develop advanced quantum devices for novel physics studies and forquantum technology applications.

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet