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Interface can be a fertile ground for exotic quantum states, includingtopological superconductivity, Majorana mode, fractal quantum Hall effect,unconventional superconductivity, Mott insulator, etc. Here we growsingle-unit-cell (1UC) FeTe film on NbSe2 single crystal by molecular beamepitaxy (MBE) and investigate the film in-situ with home-made cryogenicscanning tunneling microscopy (STM) and non-contact atomic force microscopy(AFM) combined system. We find different stripe-like superlattice modulationson grown FeTe film with different misorientation angles with respect to NbSe2substrate. We show that these stripe-like superlattice modulations can beunderstood as moire pattern forming between FeTe film and NbSe2 substrate. Ourresults indicate that the interface between FeTe and NbSe2 is atomically sharp.By STM-AFM combined measurement, we suggest the moire superlattice modulationshave an electronic origin when the misorientation angle is relatively small (<=3 degree) and have structural relaxation when the misorientation angle isrelatively large (>= 10 degree).

Moire Superlattice Modulations in Single-Unit-Cell FeTe Films Grown on NbSe2 Single Crystals