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Tin monoxide is an interesting two-dimensional material because of the rareoxide semiconductor with bipolar conductivity. However, the lower roomtemperature mobility limits the applications of SnO in the future. Thus, wesystematically investigate the effects of the different layer structures andstrains on the electron-phonon coupling and phonon-limited mobility of SnO. TheA2u phonon mode in the high frequency region is the main contributor couplingwith electron for the different layer structures. And the orbital hybridizationof Sn atoms existing only in bilayer structure changes the conduction band edgeand decreases the electron-phonon coupling conspicuously, thus the electronictransport performance of bilayer is superior to others. In addition, thecompressive strain of -1.0% in monolayer structure makes CBM consist of twovalleys at Gamma point and along M-Gamma line, also leads to the intervalleyelectronic scattering assisted by Eg-1 mode. However, the electron-phononcoupling regional transferring from high frequency (A2u) to low frequency(Eg-1) results in the little significant change of mobility.

Effects of layer stacking and strain on electronic transport in 2D tin monoxide