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Transition metal dichalcogenides (TMDCs) have gained considerable attentionbecause of their novel properties and great potential applications. The flakesof TMDCs not only have great light absorptions from visible to near infrared,but also can be stacked together regardless of lattice mismatch like othertwo-dimensional (2D) materials. Along with the studies on intrinsic propertiesof TMDCs, the junctions based on TMDCs become more and more important inapplications of photodetection. The junctions have shown many excitingpossibilities to fully combine the advantages of TMDCs, other 2D materials,conventional and organic semiconductors together. Early studies have greatlyenriched the application of TMDCs in photodetection. In this review, weinvestigate the efforts in photodetectors based on the junctions of TMDCs andanalyze the properties of those photodetectors. Homojunctions based on TMDCscan be made by surface chemical doping, elemental doping and electrostaticgating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventionalsemiconductors and TMDCs/organic semiconductor also deserve more attentions. Wealso compare the advantages and disadvantages of different junctions, and thengive the prospects for the development of junctions based on TMDCs.

Photodetectors based on junctions of Two-Dimensional Transition metal dichalcogenides