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Surface passivation with acidic (NH4)2S solution is shown to be effective inimproving the interfacial and electrical properties of HfO2/GaSb metal oxidesemiconductor devices. Compared with control samples, those treated with acidic(NH4)2S solution showed great improvements in frequency dispersion, gateleakage current and interface trap density. These improvements were attributedto the acidic (NH4)2S solution enhancing passivation of the substrates, whichwas analyzed from the perspective of chemical mechanism and confirmed by X-rayphotoelectron spectroscopy and high-resolution cross-sectional transmissionelectron microscopy.

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution