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We study the dark excitons at the interface of sharp lateral heterostructureof two-dimensional transition metal dichalcogenides. By introducing alow-energy effective Hamiltonian model, we find the energy dispersion relationof exciton and show how it depends on the onsite energy of composed materialsand their spin-orbit coupling strengths. It is shown that the effect ofgeometrical structure of interface, as a deformation gauge field(pseudo-spin-orbit coupling), should be considered in calculating the bindingenergy of exciton. By discretization of real-space version of the dispersionrelation on a triangular lattice, we show that the binding energy of excitondepends on its distance from the interface line. For exciton near the interfacethe binding energy is equal to 0.36 eV, while for the exciton enough far fromthe interface it is equal to 0.26 eV. Also, it has been shown that for zigzaginterface the binding energy increases by 0.34 meV in comparison with thearmchair interface due to the pseudo-spin-orbit interaction (gauge filed). Theresults can be used for designing the two-dimensional lateral heterostructurebased optoelectronic devices and improving their characteristics.

Interface Dark Excitons at Sharp Lateral Two-Dimensional Heterostructures