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Chirally stacked $N$-layer graphene is a semimetal with $\pm p^N$band-touching at two nonequivalent corners in its Brillioun zone. We predictthat an off-resonant circularly polarized light (CPL) drives chirally stacked$N$-layer graphene into a Floquet Chern Insulators (FCIs), a.k.a. quantumanomalous Hall insulators, with tunable high Chern number $C_F=\pm N$ and largegaps. A topological phase transition between such a FCI and a valley Hall (VH)insulator with high valley Chern number $C_v=\pm N$ induced by a voltage gatecan be engineered by the parameters of the CPL and voltage gate. We propose atopological domain wall between the FCI and VH phases, along which perfectlyvalley-polarized $N$-channel edge states propagate unidirectionally withoutbackscattering.

Floquet High Chern Insulators in Periodically Driven Chirally Stacked Multilayer Graphene