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The demand for low-dissipation nanoscale memory devices is as strong as ever.As Moore's Law is staggering, and the demand for a low-power-consumingsupercomputer is high, the goal of making information processing circuits outof superconductors is one of the central goals of modern technology andphysics. So far, digital superconducting circuits could not demonstrate theirimmense potential. One important reason for this is that a densesuperconducting memory technology is not yet available. Miniaturization oftraditional superconducting quantum interference devices is difficult below afew micrometers because their operation relies on the geometric inductance ofthe superconducting loop. Magnetic memories do allow nanometer-scaleminiaturization, but they are not purely superconducting (Baek et al 2014 Nat.Commun. 5 3888). Our approach is to make nanometer scale memory cells based onthe kinetic inductance (and not geometric inductance) of superconductingnanowire loops, which have already shown many fascinating properties (Aprili2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allowsmuch smaller devices and naturally eliminates magnetic-field cross-talk. Wedemonstrate that the vorticity, i.e., the winding number of the orderparameter, of a closed superconducting loop can be used for realizing ananoscale nonvolatile memory device. We demonstrate how to alter the vorticityin a controlled fashion by applying calibrated current pulses. A reliableread-out of the memory is also demonstrated. We present arguments that suchmemory can be developed to operate without energy dissipation.

Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops