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Non-symmorphic materials have recently been predicted to exhibit manydifferent exotic features in their electronic structures. These originate fromforced band degeneracies caused by the non-symmorphic symmetry, which not onlycreates the possibility to realize Dirac semimetals, but also recently resultedin the prediction of novel quasiparticles beyond the usual Dirac, Weyl orMajorana fermions, which can only exist in the solid state. Experimentalrealization of non-symmorphic materials that have the Fermi level located atthe degenerate point is difficult, however, due to the requirement of an oddband filling. In order to investigate the effect of forced band degeneracies onthe transport behavior, a material that has such a degeneracy at or close tothe Fermi level is desired. Here, we show with angular resolved photoemissionexperiments supported by density functional calculations, that ZrSiTe hostsseveral fourfold degenerate Dirac crossings at the X point, resulting fromnon-symmorphic symmetry. These crossings form a Dirac line node along XR, whichis located almost directly at the Fermi level and shows almost no dispersion inenergy. ZrSiTe is thus the first real material that allows for transportmeasurements investigating Dirac fermions that originate from non-symmorphicsymmetry.

Non-symmorphic band degeneracy at the Fermi level in ZrSiTe