English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The evolution of the Si(1 1 1) surface after submonolayer deposition of Ga has been observed  in situ  by low-energy electron microscopy and scanning tunnelling microscopy. A phase separation of Ga-terminated  -R 30° reconstructed areas and bare Si(1 1 1)-7 × 7 regions leads to the formation of a two-dimensional nanopattern. The shape of this pattern can be controlled by the choice of the surface miscut direction, which is explained in terms of the anisotropy of the domain boundary line energy and a high kink-formation energy. A general scheme for the nanopattern formation, based on intrinsic properties of the Si(1 1 1) surface, is presented. Experiments performed with In instead of Ga support this scheme.

Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1)