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An abrupt Mott metal-insulator transition (MIT) rather than the continuousHubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for thefirst time in VO_2, a strongly correlated material, by inducing holes of about0.018% into the conduction band. As a result, a discontinuous jump of thedensity of states on the Fermi surface is observed and inhomogeneity inevitablyoccurs. The gate effect in fabricated transistors is clear evidence that theabrupt MIT is induced by the excitation of holes.Comment: 4 pages, 4 figure

Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

Mechanism and observation of Mott transition in VO₂-based two- and three-terminal devices