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The discovery of non-magnetic extreme magnetoresistance (XMR) materials hasinduced great interests because the XMR phenomenon challenges our understandingof how a magnetic field can alter electron transport in semimetals. Among XMRmaterials, the LaSb shows XMR and field-induced exotic behaviors but it seemsto lack the essentials for these properties. Here, we study themagnetotransport properties and electronic structure of LaBi, isostructural toLaSb. LaBi exhibits large MR as in LaSb, which can be ascribed to the nearlycompensated electron and hole with rather high mobilities. More importantly,our analysis suggests that the XMR as well as field-induced resistivity upturnand plateau observed in LaSb and LaBi can be well explained by the two-bandmodel with the compensation situation. We present the critical conditionsleading to these field-induced properties. It will contribute to understandingthe XMR phenomenon and explore novel XMR materials.

Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals