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We have investigated electron band structure of epitaxially grown graphene onan SiC(0001) substrate using angle-resolved photoemission spectroscopy. Insingle-layer graphene, abnormal high spectral intensity is observed at theDirac energy whose origin has been questioned between in-gap states induced bythe buffer layer and plasmaron bands induced by electron-plasmon interactions.With the formation of double-layer graphene, the Dirac energy does not show thehigh spectral intensity any longer different from the single-layer case. Theinconsistency between the two systems suggests that the main ingredient of thehigh spectral intensity at the Dirac energy of single-layer graphene is theelectronic states originating from the coupling of the graphene $\pi$ bands tothe localized $\pi$ states of the buffer layer, consistent with the theoreticalprediction on the presence of in-gap states.

Study on the high spectral intensity at the Dirac energy of single-layer graphene on an SiC substrate