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The detailed electronic structure of a layered semiconductor 1T-TiS2 and its modification in Ni-intercalated Ni1/3TiS2 were studied beyond the full surface Brillouin zone by use of a momentum microscope and He-I light source on their in-situ cleaved surfaces. Clear dispersions associated with the electron Fermi surface (FS) pockets induced by the self-intercalated Ti in non-doped 1T-TiS2 around the M points, as well as the hole FS pocket induced by the surface Ni in Ni1/3TiS2 around the  ? point, were confirmed in the observed high-resolution EB(kx, ky) band cross sections. A bird?s eye view of the two-dimensional band dispersions EB(kx, ky) clarified many complex band dispersions. The experimental results are compared with first-principles band calculations performed for the bulk as well as the one monolayer (ML)-TiS2 and surface-1ML-Ni1/3TiS2. The characteristic changes of the band dispersions near the Fermi level (EF) are ascribed to the contribution of the 3d states of the surface Ni atoms with the C3v symmetry in contrast to the ?D3d? symmetry of the intercalated Ni. The importance of experimental studies of band dispersions in the full Brillouin zone is demonstrated, showing the high potential of momentum microscopy.

Momentum microscopy of the layered semiconductor TiS2and Ni intercalated Ni1/3TiS2

Momentum microscopy of the layered semiconductor TiS₂and Ni intercalated Ni_1/3TiS₂