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We investigated the metallicity of Ag-root 3 ordered atomic wires closeto one monolayer (ML) coverage, which are formed on Si(557) via selfassembly. For this purpose we combined high resolution electron energyloss spectroscopy with tunneling microscopy. By extending the excess Agcoverage up to 0.6 ML on samples annealed at high temperatures wherepartial desorption occurs, we demonstrate that one-dimensionalmetallicity in the Ag-root 3 x root 3 R30 degrees ordered atomic wireson the (111) mini-terraces originates only from Ag atoms in excess of(local) monolayer coverage, which are adsorbed and localized at thehighly stepped parts of the Si(557) surface. Thus these Ag atoms act asextrinsic dopants on the atomic scale, causing coverage dependentsubband filling and increasing localization as a function of dopingconcentration. The second layer lattice gas as well as Ag islands on the(111) terraces turn out not to be relevant as dopants. We simulated thepeculiar saturation behavior within a modified lattice gas model andgive evidence that the preparation dependent saturation of doping is dueto changes of average terrace size and step morphology induced by hightemperature treatment.Niedersächsisches Ministerium für Wissenschaftund KulturDFG/FOR/170

Origin of metallicity in atomic Ag wires on Si(557)