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The century-old study of photon-phonon coupling has seen a remarkable revivalin the past decade. Driven by early observations of dynamical back-action, thefield progressed to ground-state cooling and the counting of individualphonons. A recent branch investigates the potential of traveling-wave,optically broadband photon-phonon interaction in silicon circuits. Here, wereport continuous-wave Brillouin gain exceeding the optical losses in a seriesof suspended silicon beams, a step towards selective on-chip amplifiers. Weobtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the highestto date in the phononic gigahertz range. We also find indications thatgeometric disorder poses a significant challenge towards nanoscale phonon-basedtechnologies.

Net on-chip Brillouin gain based on suspended silicon nanowires