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We study spin and valley transports in junctions composed of silicene andtopological crystalline insulators. We consider normal/magnetic/normal Diracmetal junctions where a gate electrode is attached to the magnetic region. Innormal/antiferromagnetic/normal silicene junction, we show that the currentthrough this junction is valley and spin polarized due to the coupling betweenvalley and spin degrees of freedom, and the valley and spin polarizations canbe tuned by local application of a gate voltage. In particular, we find a fullyvalley and spin polarized current by applying the electric field. Innormal/ferromagnetic/normal topological crystalline insulator junction with astrain induced in the ferromagnetic segment, we investigate valley resolvedconductances and clarify how the valley polarization stemming from the strainand exchange field appears in this junction. It is found that changing thedirection of the magnetization and the potential in the ferromagnetic region,one can control the dominant valley contribution out of four valley degrees offreedom. We also review spin transport in normal/ferromagnetic/normal graphenejunctions, and spin and valley transports in normal/ferromagnetic/normalsilicene junctions for comparison.

Spin and valley transports in junctions of Dirac fermions