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The fractional quantized Hall state (FQHS) at the filling factor {\nu} = 5/2is of special interest due to its possible application for quantum computing.Here we report on the optimization of growth parameters that allowed us toproduce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135mK. We concentrated on optimizing the MBE growth to provide high 5/2 gapenergies in "as-grown" samples, without the need to enhance the 2DEGsproperties by illumination or gating techniques. Our findings allow us toanalyse the impact of doping in narrow quantum wells with respect toconventional DX-doping in AlxGa1-xAs. The impact of the setback distancebetween doping layer and 2DEG was investigated as well. Additionally, we founda considerable increase in gap energy by reducing the amount of backgroundimpurities. To this end growth techniques like temperature reductions forsubstrate and effusion cells and the reduction of the Al mole fraction in the2DEG region were applied.

Increasing the {\nu} = 5 / 2 gap energy: an analysis of MBE growth parameters