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Towards next-generation spintronics devices, such as computer memories andlogic chips, it is necessary to satisfy high thermal stability, low-powerconsumption and high spin-polarization simultaneously. Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgOinterface is illustrated. An interfacial perpendicular-anisotropy, coming fromthe Fe-O orbital hybridization, provides high magnetic thermal stability and alow stray field. We find an electric-field-induced giant modification of suchperpendicular-anisotropy via a great magnetoelectric effect (the anisotropyenergy coefficient beta~10-7 erg/V cm). Our spin electronic-structure andnon-collinear transport calculations indicate high spin-polarized interfacialstates and good magnetoresistance properties of CFA/MgO/CFA perpendicularmagnetic tunnel junctions.

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction