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We present a microfabricated surface-electrode ion trap with a pair ofintegrated waveguides that generate a standing microwave field resonant withthe 171Yb+ hyperfine qubit. The waveguides are engineered to position the waveantinode near the center of the trap, resulting in maximum field amplitude anduniformity along the trap axis. By calibrating the relative amplitudes andphases of the waveguide currents, we can control the polarization of themicrowave field to reduce off-resonant coupling to undesired Zeeman sublevels.We demonstrate single-qubit pi-rotations as fast as 1 us with less than 6 %variation in Rabi frequency over an 800 um microwave interaction region. Fullycompensating pulse sequences further improve the uniformity of X-gates acrossthis interaction region.

Spatially uniform single-qubit gate operations with near-field microwaves and composite pulse compensation