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Interest in the use of graphene in electronic devices has motivated anexplosion in the study of this remarkable material. The simple, linear Diraccone band structure offers a unique possibility to investigate its finerdetails by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES hasbeen performed on graphene grown on metal substrates but electronicapplications require an insulating substrate. Epitaxial graphene grown by thethermal decomposition of silicon carbide (SiC) is an ideal candidate for thisdue to the large scale, uniform graphene layers produced. The experimentalspectral function of epitaxial graphene on SiC has been extensively studied.However, until now the cause of an anisotropy in the spectral width of theFermi surface has not been determined. In the current work we show, bycomparison of the spectral function to a semi-empirical model, that theanisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$)of graphene domains in graphene grown on SiC(0001) samples. In addition to thedirect benefit in the understanding of graphene's electronic structure thiswork suggests a mechanism to explain similar variations in related ARPES data.

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)