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We investigate the photoluminescence temperature dependence of individualInAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. Thehigh-density dots are grown on InP substrates and the selection of a smallerdot number is done by the processing of suitable nanometer sized mesas. Usingensembles of only a few dots inside such mesas, their temperature stability,inter-dot charge transfer, as well as, carrier capture and escape mechanismsout of the dots are investigated systematically. This includes the discussionof the dot ensemble and individual dots. Among the single-dot properties, weinvestigate the transition of emission lines from zero-phonon line to acousticphonon sideband dominated line shape with temperature. Moreover, the presenceof single recombination lines up to temperatures of around 150 K isdemonstrated.

Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures