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Weak localization is studied in two high-quality epitaxial graphene samples grown on silicon-faced 6H-SiC substrates. Following the methodology of Kozikov et al (2010 Phys. Rev. B 82 075424), we measured the temperature dependence of carrier conductivity at zero and low magnetic (B) fields. In both samples, a logarithmic temperature dependence of the carrier conductivity was observed at B = 0 and its amplitude was larger than predicted by a single-particle model, suggesting that electron–electron interaction plays an important role in electron transport in epitaxial graphene films.

Electron–electron interaction in high-quality epitaxial graphene