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Extensive Kerr microscopy studies reveal a strongly temperature dependentdomain wall dynamics in Hall-bars made from compressively strained GaMnAs.Depending on the temperature magnetic charging of domain walls is observed andnucleation rates depend on the Hall-geometry with respect to the crystal axes.Above a critical temperature where a biaxial-to-uniaxial anisotropy transitionoccurs a drastic increase of nucleation events is observed. Below thistemperature, the nucleation of domains tends to be rather insensitive totemperature. This first spatially resolved study of domain wall dynamics inpatterned GaMnAs at variable temperatures has important implications forpotential single domain magneto-logic devices made from ferromagneticsemiconductors.

Temperature dependent Neel wall dynamics in GaMnAs/GaAs