English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present a systematical experimental investigation of an unusual transportphenomenon observed in two dimensional electron gases in Si/SiGeheterostructures under integer quantum Hall effect (IQHE) conditions. Thisphenomenon emerges under specific experimental conditions and in differentmaterial systems. It is commonly referred to as Hall resistance overshoot,however, lacks a consistent explanation so far. Based on our experimentalfindings we are able to develop a model that accounts for all of ourobservations in the framework of a screening theory for the IQHE. Within thismodel the origin of the overshoot is attributed to a transport regime wherecurrent is confined to co-existing evanescent incompressible strips ofdifferent filling factors.

Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment