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We report large anisotropic magnetoresistance (AMR) behaviours in singlelateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistabletelegraphic switching. The nanoconstriction devices are fabricated usinghigh-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer.The unusual behaviour exhibited by these devices is discussed in the context ofexisting theories for enhanced AMR ferromagnetic semiconductor nanoscaledevices, particularly with regard to the dependence on the magnetotransport ofthe bulk material. We conclude that our results are most consistent with theCoulomb blockade AMR mechanism.

Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions