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By means of high-resolution angle resolved photoelectron spectroscopy (ARPES)we have studied the fermiology of 2H transition metal dichalcogenide polytypesTaSe2, NbSe2, and Cu0.2NbS2. The tight-binding model of the electronicstructure, extracted from ARPES spectra for all three compounds, was used tocalculate the Lindhard function (bare spin susceptibility), which reflects thepropensity to charge density wave (CDW) instabilities observed in TaSe2 andNbSe2. We show that though the Fermi surfaces of all three compounds possess anincommensurate nesting vector in the close vicinity of the CDW wave vector, thenesting and ordering wave vectors do not exactly coincide, and there is nodirect relationship between the magnitude of the susceptibility at the nestingvector and the CDW transition temperature. The nesting vector persists acrossthe incommensurate CDW transition in TaSe2 as a function of temperature despitethe observable variations of the Fermi surface geometry in this temperaturerange. In Cu0.2NbS2 the nesting vector is present despite different dopinglevel, which lets us expect a possible enhancement of the CDW instability withCu-intercalation in the CuxNbS2 family of materials.

Fermi surface nesting in several transition metal dichalcogenides