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Molecular beam epitaxy of K-doped Ba122(Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on aMgO substrate. Microstructural observation revealed that the undoped Ba122served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. Thefilm exhibited a high critical temperature of 39.8 K and a high criticalcurrent density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth ofepitaxial thin film will enable artificial single grain boundary on oxidebicrystal substrates and reveal the grain boundary transport nature of K-dopedBa122.

K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering