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In this study, we fabricate 5-30-nm-thick films of FeSe/STO using pulsedlaser deposition (PLD). The grown films exhibit superconductivity with an onset$T_{\mathrm{c}}$ that is much higher than that of bulk FeSe under ambientpressure. The observed $T_{\mathrm{c}}$ values are exceptionally high in termsof the strain vs. $T_{\mathrm{c}}$ relationship of the same materialestablished so far. Furthermore, $T_{\mathrm{c}}$ increases as the filmthickness decreases, except for films thinner than 10 nm. This thicknessdependence of $T_{\mathrm{c}}$ is in good agreement with the results reportedfor films grown by molecular beam epitaxy (MBE) that exhibit interfacesuperconductivity. These results indicate the realization of interfacesuperconductivity in PLD-grown FeSe/STO. Furthermore, our PLD techniquerequires no post-annealing to realize interface superconductivity, which isdifferent from MBE techniques. Because the PLD technique has the advantage thatvarious interfaces can be fabricated easily by simply altering the targetmaterials, our results open novel routes to study interface superconductivitytoward higher $T_{\mathrm{c}}$ by systematic control of the interface.

Interface superconductivity in FeSe thin films on SrTiO$_3$grown by the PLD technique