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We report an atomic-scale analysis of the microstructure of Nb3Sn coating onNb prepared by vapor diffusion process for superconducting radiofrequency (SRF)cavity application using transmission electron microscopy (TEM). Epitaxialgrowth of Nb3Sn on the Nb substrate is found and four types of orientationrelationships at the Nb3Sn/Nb interface are identified by electron diffractionor high-resolution scanning transmission electron microscopy (STEM) analysis.Thin Nb3Sn grains are observed in regions with low Sn flux and they have thespecific orientation relationship, Nb3Sn (1-20)//Nb (-111) and Nb3Sn (002)//Nb(0-11). The Nb3Sn/Nb interface of thin grains had a large lattice mismatch,12.3 at.%, and a high density of misfit dislocations was observed by HR-STEM.Based on our microstructural analysis of the thin grains, we conclude that thethin regions are probably a result of a slow interfacial reaction with thisparticular orientation relationship at the interface. The Sn-deficient regionsare seen to form initially at the Nb3Sn/Nb interface and remain in the grainsdue to the slow diffusion of Sn in bulk Nb3Sn. The formation of Sn-deficientregions and the effects of strain and interfacial energies on the formation ofSn-deficient regions at various interfaces were also estimated byfirst-principle calculation. The finding of orientation relationships at theNb3Sn/Nb interface provides important information about the formation ofdefects in Nb3Sn coatings such as large thin regions, Sn-deficient regions,which are critical to the performance of Nb3Sn superconducting radiofrequencycavities for accelerators.

Atomic scale analysis of Nb3Sn on Nb prepared by a vapor-diffusion process for superconducting radiofrequency cavity applications