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In this paper, we investigate the electrical evolution of tungsten (W) andtungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermaltreatments at different annealing temperatures from 475 to 700 {\deg} C. Foreach annealing temperature, the uniformity of the Schottky barrier height(${\phi_B}$) and ideality factor (n) was monitored by current-voltage (I-V)measurements in forward bias, performed over sets of equivalent diodes. Goodvalues of n (below 1.05) were found for both contacts up to thermal annealingat 700 {\deg} C. On the other hand, the barrier of the two contacts behavesdifferently. For the W/4H-SiC diode, the ${\phi_B}$ increases with theannealing temperature (from 1.14 eV at 475 {\deg} C to 1.25 eV at 700 {\deg}C), whereas the Schottky barrier in WC/4H-SiC features a slight reductionalready with thermal annealing at 475 {\deg} C, remaining almost constant ataround 1.06 eV up to annealing at 700 {\deg} C. A deeper characterization wasperformed on the 700 {\deg} C-annealed contacts by studying thetemperature-dependence of the Schottky parameters bycurrent-voltage-temperature (I-V-T) characterization. The ${\phi_B}$ and nbehaviour with temperature indicates the presence of a nanoscale lateralinhomogeneity for both Schottky contacts, which can be described by Tung'smodel. Finally, the temperature-dependence of the reverse characteristics couldbe described by the thermionic field emission model (TFE), accounting for thetemperature dependent barrier height determined from forward characterization.

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures