Open AccessSmooth plasma etching of GeSn nanowires for gate-all-around field effect transistors
Author(s) -
Étienne Eustache,
Mohamed Aymen Mahjoub,
Youssouf Guerfi,
S. Labau,
J. Aubin,
JeanMichel Hartmann,
F. Bassani,
Sylvain David,
B. Salem
Publication year - 2021
Publication title -
semiconductor science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.712
H-Index - 112
eISSN - 1361-6641
pISSN - 0268-1242
DOI - 10.1088/1361-6641/abfbb5
Subject(s) - materials science , etching (microfabrication) , nanowire , reactive ion etching , tin , germanium , inductively coupled plasma , hydrogen silsesquioxane , plasma , optoelectronics , dry etching , field effect transistor , transistor , plasma etching , alloy , nanotechnology , resist , silicon , layer (electronics) , electron beam lithography , metallurgy , physics , quantum mechanics , voltage
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