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In this work, an evaluation of the contact quality of black phosphorus (BP)field-effect transistors (FETs) from different technologies previously reportedis performed by means of an efficient and reliable contact resistanceextraction methodology based on individual device practical characteristics. Agood agreement is achieved between the extracted values with the Y-functionmethod used here and reference values obtained with other methods consideringinternal values as well as with more expensive methods involving fabricatedtest structures. The method enables a direct evaluation of different steps inthe same technology and it embraces the temperature dependence of the contactcharacteristics. Channel phenomena have no impact on the extracted contactresistance values. High-frequency performance projections are obtained forfabricated devices based on the extracted contact resistance.

Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies