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We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activatedvibrational modes in GeSn semiconductors investigated using Raman scatteringspectroscopy. By using an excitation wavelength close to E1 gap, all modes areclearly resolved and their evolution as a function of strain and Sn content isestablished. In order to decouple the individual contribution of content andstrain, the analysis was conducted on series of pseudomorphic and relaxedepitaxial layers with a Sn content in the 5-17at.% range. All vibrational modeswere found to display the same qualitative behavior as a function of contentand strain, viz. a linear downshift as the Sn content increases or thecompressive strain relaxes. Simultaneously, Ge-Sn and Ge-Ge peaks broaden, andthe latter becomes increasingly asymmetric. This asymmetry, coupled with thepeak position, is exploited in an empirical method to accurately quantify theSn composition and lattice strain from Raman spectra.

Decoupling the effects of composition and strain on the vibrational modes of GeSn