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Moir\'e fringes are used throughout a wide variety of applications in physicsand engineering to bring out small variations in an underlying lattice bycomparing with another reference lattice. This method was recently demonstratedin Scanning Transmission Electron Microscopy imaging to provide local strainmeasurement in crystals by comparing the crystal lattice with the scanningraster that then serves as the reference. The images obtained in this waycontain a beating fringe pattern with a local period that represents thedeviation of the lattice from the reference. In order to obtain the actualstrain value, a region containing a full period of the fringe is required,which results in a compromise between strain sensitivity and spatialresolution. In this paper we propose an advanced setup making use of anoptimised scanning pattern and a novel phase stepping demodulation scheme. Wedemonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFETdevices in which strain plays a crucial role in modulating the charge carriermobility. The obtained results are compared with both Nano-beam diffraction andthe recently proposed Bessel beam diffraction technique. The setup provides amuch improved spatial resolution over conventional moir\'e imaging in STEMwhile at the same time being fast and requiring no specialised diffractioncamera as opposed to the diffraction techniques we compare to.

Strain measurement in semiconductor FinFET devices using a novel moir\'e demodulation technique