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Si nanopillars of less than 50 nm diameter have been irradiated in a heliumion microscope with a focused Ne$^+$ beam. The morphological changes due to ionbeam irradiation at room temperature and elevated temperatures have beenstudied with the transmission electron microscope. We found that the shapechanges of the nanopillars depend on irradiation-induced amorphization andthermally driven dynamic annealing. While at room temperature, the nanopillarsevolve to a conical shape due to ion-induced plastic deformation and viscousflow of amorphized Si, simultaneous dynamic annealing during the irradiation atelevated temperatures prevents amorphization which is necessary for the viscousflow. Above the critical temperature of ion-induced amorphization, a steadydecrease of the diameter was observed as a result of the dominating forwardsputtering process through the nanopillar sidewalls. Under these conditions thenanopillars can be thinned down to a diameter of 10 nm in a well-controlledmanner. A deeper understanding of the pillar thinning process has been achievedby a comparison of experimental results with 3D computer simulations based onthe binary collision approximation.

Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm