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We present a theoretical analysis and optimisation of the properties andperformance of mid-infrared semiconductor lasers based on the dilute bismidealloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InPsubstrates. The ability to independently vary the epitaxial strain and emissionwavelength in this quaternary alloy provides significant scope for bandstructure engineering. Our calculations demonstrate that structures based oncompressively strained In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ quantum wells (QWs)can readily achieve emission wavelengths in the 3 -- 5 $\mu$m range, and thatthese QWs have large type-I band offsets. As such, these structures have thepotential to overcome a number of limitations commonly associated with thisapplication-rich but technologically challenging wavelength range. Byconsidering structures having (i) fixed QW thickness and variable strain, and(ii) fixed strain and variable QW thickness, we quantify key trends in theproperties and performance as functions of the alloy composition, structuralproperties, and emission wavelength, and on this basis identify routes towardsthe realisation of optimised devices for practical applications. Our analysissuggests that simple laser structures -- incorporatingIn$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ QWs and unstrained ternaryIn$_{0.53}$Ga$_{0.47}$As barriers -- which are compatible with establishedepitaxial growth, provide a route to realising InP-based mid-infrared diodelasers.

semiconductor science and technology

Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared  semiconductor lasers: type-I quantum wells for emission beyond 3 $\mu$m on  InP substrates