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The selective area growth of Ga-assisted GaAs nanowires (NWs) with a highvertical yield on Si(111) substrates is still challenging. Here, we exploredifferent surface preparations and their impact on NW growth by molecular beamepitaxy. We show that boiling the substrate in ultrapure water leads to asignificant improvement in the vertical yield of NWs (realizing 80%) grown onsubstrates patterned by electron-beam lithography (EBL). Tentatively, weattribute this improvement to a reduction in atomic roughness of the substratein the mask opening. On this basis, we transfer our growth results tosubstrates processed by a technique that enables the efficient patterning oflarge arrays, nano imprint lithography (NIL). In order to obtain hole sizesbelow 50 nm, we combine the conventional NIL process with an indirect patterntransfer (NIL-IPT) technique. Thereby, we achieve smaller hole sizes thanpreviously reported for conventional NIL and growth results that are comparableto those achieved on EBL patterned substrates.

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)