English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Misfit strain in core-shell nanowires can be elastically released by nanowirebending in case of asymmetric shell growth around the nanowire core. In thiswork, we investigate the bending of GaAs nanowires during the asymmetricovergrowth by an In(x)Ga(1-x)As shell caused by avoiding substrate rotation. Weobserve that the nanowire bending direction depends on the nature of thesubstrate's oxide layer, demonstrated by Si substrates covered by native andthermal oxide layers. Further, we follow the bending evolution by time-resolvedin-situ X-ray diffraction measurements during the deposition of the asymmetricshell. The XRD measurements give insight into the temporal development of thestrain as well as the bending evolution in the core-shell nanowire.

In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires