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Innovative applications based on two-dimensional solids requirecost-effective fabrication processes resulting in large areas of high qualitymaterials. Chemical vapour deposition is among the most promising methods tofulfill these requirements. However, for 2D materials prepared in this way itis generally assumed that they are of inferior quality in comparison to theexfoliated 2D materials commonly used in basic research. In this work wechallenge this assumption and aim to quantify the differences in quality forthe prototypical transition metal dichalcogenide MoS$_2$. To this end singlelayers of MoS$_2$ prepared by different techniques (exfoliation, grown bydifferent chemical vapor deposition methods, transfer techniques, and asvertical heterostructure with graphene) are studied by Raman andphotoluminescence spectroscopy, complemented by atomic force microscopy. Wedemonstrate that as-prepared MoS$_2$, directly grown on SiO$_2$, differs fromexfoliated MoS$_2$ in terms of higher photoluminescence, lower electronconcentration, and increased strain. As soon as a water film is intercalated(e.g., by transfer) underneath the grown MoS$_2$, in particular the(opto-)electronic properties become practically identical to those ofexfoliated MoS$_2$. A comparison of the two most common precursors shows thatthe growth with MoO$_3$ causes greater strain and/or defect density deviationsthan growth with ammonium heptamolybdate. As part of a heterostructure directlygrown MoS$_2$ interacts much stronger with the substrate, and in this case anintercalated water film does not lead to the complete decoupling, which istypical for exfoliation or transfer. Our work shows that the supposedly poorerquality of grown 2D transition metal dichalcogenides is indeed a misconception.

Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation