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A procedure to achieve the density-controlled growth of gold-catalyzed InPnanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid methodby molecular beam epitaxy is reported. We develop an effective and mask-freemethod based on controlling the number and the size of the Au-In catalystdroplets in addition to the conditions for the NW nucleation. We show that theNW density can be tuned with values in the range of 18 {\mu}m-2 to < 0.1{\mu}m-2 by the suitable choice of the In/Au catalyst beam equivalent pressure(BEP) ratio, by the phosphorous BEP and the growth temperature. The same degreeof control is transferred to InAs/InP quantum dot-nanowires, taking advantageof the ultra-low density to study by micro-photoluminescence the opticalproperties of a single quantum dot-nanowires emitting in the telecom bandmonolithically grown on silicon. Optical spectroscopy at cryogenic temperaturesuccessfully confirmed the relevance of our method to excite single InAsquantum dots on the as-grown sample, which opens the path for large-scaleapplications based on single quantum dot-nanowire devices integrated onsilicon.

Density-controlled growth of vertical InP nanowires on Si(111) substrates